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	<title>circuitmaniac.com &#187; IGBT</title>
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		<title>Insulated Gate Bipolar Junction Transistor(IGBT)</title>
		<link>http://www.circuitmaniac.com/2008/10/17/insulated-gate-bipolar-junction-transistorigbt/</link>
		<comments>http://www.circuitmaniac.com/2008/10/17/insulated-gate-bipolar-junction-transistorigbt/#comments</comments>
		<pubDate>Fri, 17 Oct 2008 19:51:45 +0000</pubDate>
		<dc:creator>John</dc:creator>
				<category><![CDATA[IGBT]]></category>
		<category><![CDATA[Power Electronics]]></category>

		<guid isPermaLink="false">http://electricalandelectronics.org/?p=672</guid>
		<description><![CDATA[Bipolar junction transistor have low power losses but have long switching time.(especially at turnoff).MOSFETs have very fast switching characteristics(low turn on and turn off times)but have higher power losses.IGBT combines the advantages of MOSFET and BJT.Thus an IGBT has low switching times as well as low power losses.Its called as IGBT or GEMET or COMFET(conductivity [...]]]></description>
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